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dc.contributor.author黄美纯
dc.date.accessioned2011-06-29T01:52:31Z
dc.date.available2011-06-29T01:52:31Z
dc.date.issued1981-02
dc.identifier.citation厦门大学学报(自然科学版),1981(1):30-41zh_CN
dc.identifier.issn0438-0479
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9870
dc.description.abstract【中文摘要】 本文提出一种分析三元半导体合金霍尔迁移率随组分变化的半经验方法。详细描述了Ga_(1-x)Al_xA_s电子迁移率变化与能带结构的关系,在导带Γ—L—X三能谷模型的基础上,引进能谷迁移率内插法,给出了霍尔迁移率随组分变化的理论公式,对Ga_(1-x)Al_xA_s进行具体计算发现同现有的实验结果符合得很好。理论曲线与实验数据的拟合采用L带电子迁移率作为可调参数,因此本方法允许从霍尔迁移率的实验研究中分析出至今了解甚少的L带迁移率的数值。研究表明,在0.15 【英文摘要】 In this paper, a new semiempirical method for the compositional dependence analysis of electron Hall mobility in ternary semiconductor alloys is presented. Dependence of Hall mobility in Gai-xAlxAs on the band structure at room temperature is described in detail. Theoretical calculations of Hall mobility as a function of composition have been made on three-valley (-L-X) model and an interpolation of valley-electron mobility. It is shown that L-band plays a significant part in Hall mobility in the compositio...zh_CN
dc.language.isozhzh_CN
dc.publisher《厦门大学学报(自然科学版)》编辑部zh_CN
dc.titlen-Ga_(1-x)Al_xAs的能带结构和霍尔迁移率zh_CN
dc.title.alternativeHaH Mobility and Band Structure of n-Ga_(1-x)Al_x As Alloyszh_CN
dc.typeArticlezh_CN


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