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n-GaAlAs载流子浓度的温度特性和多能谷修正
Temperature Dependence of the Electron Density and Its Multivalley Correction in n-GaAlAs Alloys

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n_GaAlAs载流子浓度的温度特性和多能谷修正.pdf (416.7Kb)
Date
1982-02
Author
黄美纯
黄景昭
胡志萍
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  • 物理技术-已发表论文 [4223]
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Abstract
【中文摘要】 本文用导带三能谷模型具体讨论了n-GaAlAs中载流子浓度的温度特n_0(x,T)。分析表明:在较高温区(T>200K)载流子浓度的多谷修正是不可忽视的。用修正后的n_0(x,T)实验数据同非简并统计公式拟合,发现施主电离能有一弱的温度关系,它取决于有关带边的温度系数。观察到较低温区(T<200K)存在着与非简并理论不一致的大残留载流子浓度,这个现象可能同施主络合(DX)中心的低温性质有关。 【英文摘要】 The conduction band three-valley model has been used to discuss the temperature dependence of the carrier concentration n0(x,T) in Te-doped GaAlAs. It is shown that the multivalley correction of the carrier concne-trations is not negligible in higher temperature range (T>200K). The corrected carrier-density-data arc fitted by a non-degenerate statistics formula which is valid for higher temperature. It is found that the donor ionization energy has a weak temperature dependence determined by temperature coef...
Citation
厦门大学学报(自然科学版),1982(1):24-32
URI
https://dspace.xmu.edu.cn/handle/2288/9869

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