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dc.contributor.author王仁智
dc.contributor.author黄美纯
dc.date.accessioned2011-06-27T01:59:19Z
dc.date.available2011-06-27T01:59:19Z
dc.date.issued1992-04
dc.identifier.citation半导体学报,1992(4):253-257zh_CN
dc.identifier.issn0253-4177
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9818
dc.description.abstract【中文摘要】 本文基于LMTO-ASA能带计算中的交叠球近似,提出一种计算超晶格中分子层的成键态能量E_b、反成键态能量E_s和平均键能E_h的方法.研究GaP、Si构成(GaP)_1(SiSi)_1(001)前后,其界面附近的E_b、E_s和E_h值的变化情况.得出异质结界面两侧平均键能E_h相互“对齐”的数值结果,讨论了“对齐”的机制等有关问题. 【英文摘要】 Based on the LMTO-ASA approach, an accurate method for calculating the bondingenergy E_b, anti-bonding energy E_a and average hybrid energy E_h in superlattice molecularlayer is suggested. The changes of the energies E_b,E_a and E_h on the interface of (GaP)_1(iSSi)_1(001) due to the superlattice formed have been investigated. The numerical results showthat the average hybrid energies E_h in two sides of the heterojunction will aim each other.The question about E_h as a reference level in the theory of vale... 【基金】 国家自然科学基金zh_CN
dc.description.sponsorship国家自然科学基金zh_CN
dc.language.isozhzh_CN
dc.publisher《半导体学报》编辑部zh_CN
dc.title超晶格分子层中的键能和平均键能的研究zh_CN
dc.title.alternativeOn Bonding Energy and Average Bonding Energy in Superlattice Molecular Layerzh_CN
dc.typeArticlezh_CN


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