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dc.contributor.author王仁智
dc.contributor.author黄美纯
dc.contributor.author柯三黄
dc.date.accessioned2011-06-27T01:03:27Z
dc.date.available2011-06-27T01:03:27Z
dc.date.issued1993-03
dc.identifier.citationScience in China,Ser.A, 中国科学A辑(英文版),1993(3):319-325zh_CN
dc.identifier.issn1006-9283
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9805
dc.description.abstract【中文摘要】 <正> In the light of our previous result that the average bond energy E_h valuelines up across heterojunction interfaces,in this paper,the valence-band offsets in ten hete-rojunctions have been calculated using the E_h as a reference level with the LMTO-ASAband-structure method.The calculated results are in excellent agreement with those fromthe more elaborate first-principles self-consistent interface calculations.As the presentmethod requires by far the smaller computational effort,it is very convenient fo... 【英文摘要】 In the light of our previous result that the average bond energy E_h value lines up across heterojunction interfaces,in this paper,the valence-band offsets in ten hete- rojunctions have been calculated using the E_h as a reference level with the LMTO-ASA band-structure method.The calculated results are in excellent agreement with those from the more elaborate first-principles self-consistent interface calculations.As the present method requires by far the smaller computational effort,it is very convenient f...zh_CN
dc.description.sponsorshipProject supported by the National Natural Science Foundation of Chinazh_CN
dc.language.isoenzh_CN
dc.publisher《Science in China,Ser.A, 中国科学A辑(英文版)》编辑部zh_CN
dc.subjectsemiconductor heterojunetionzh_CN
dc.subjectvalence-band offsetszh_CN
dc.subjectab initio calculationzh_CN
dc.titleAb initio Calculation of Valence-band Offsets for Lattice-matched Heterojunctionszh_CN
dc.typeArticlezh_CN


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