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dc.contributor.author柯三黄
dc.contributor.author王仁智
dc.contributor.author黄美纯
dc.date.accessioned2011-06-24T00:54:28Z
dc.date.available2011-06-24T00:54:28Z
dc.date.issued1994-01
dc.identifier.citation物理学报,1994(1):103-109zh_CN
dc.identifier.issn1000-3290
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9756
dc.description.abstract【中文摘要】 对处于不同应变状态下的超晶格(GaP)_1(GaAs)_1(001),(InP)_n(InAs)_n(001)(n=1,3)的电子结构进行了从头自洽计算。采用冻结势方法分析了超晶格各分子层的价带顶E_v和平均键能E_m的行为,对以E_m为能量参考的应变层超晶格价带边不连续值计算方法作了较全面的第一原理的数值检验,基于这一方法,本文分别对InP,InAs,GaP,GaAs和Al-As5种化合物在3种不同的应变状态下的E_m-E_v值作了从头计算,求出了由这几种材料构成的5种应变层超晶格的ΔE_v值,并讨论了它们的应变效应。本文的计算结果与目前可以得到的实验结果及几个有关的界面自洽计算结果相当一致。 【英文摘要】 Ab initio calculations of electronic structure for strained superlattices(SLS)(GaP)_1(GaAs)_1(001)and(InP)_n(InAs)_n(001)(n=1,3)are carried out,the valence-band maximum E_v and the average bond energy E in each molecular layer of SLS’sare investigated with the frozen shape approach.The average-bond-energy methodfor determining valence-band offsets at SLS’s are suggestted and tested comprehensi-vely.Based on this method,the valence-band offsets at five SLS’s under three st-rain conditions are determined,thei...zh_CN
dc.description.sponsorship国家自然科学基金,福建省自然科学基金zh_CN
dc.language.isozhzh_CN
dc.publisher《物理学报》编辑部zh_CN
dc.title应变层半导体超晶格价带边不连续性的第一原理研究zh_CN
dc.title.alternativeTHEORETICAL STUDIES ON THE VALENCE-BAND OFFSETS AT STRAINED SEMICONDUCTOR SUPERLATTICESzh_CN
dc.typeArticlezh_CN


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