Show simple item record

dc.contributor.author刘宝林
dc.contributor.author黄美纯
dc.contributor.author陈朝
dc.contributor.author陈丽容
dc.contributor.author陈龙海
dc.contributor.author杨树人
dc.contributor.author陈伯军
dc.contributor.author王本忠
dc.contributor.author范爱英
dc.contributor.author李正庭
dc.contributor.author刘式墉
dc.date.accessioned2011-06-24T00:32:10Z
dc.date.available2011-06-24T00:32:10Z
dc.date.issued1995-12
dc.identifier.citation半导体光电,1995(4):348-351zh_CN
dc.identifier.issn1001-5868
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9745
dc.description.abstract【中文摘要】 采用LP-MOCVD制作了InGaAs/InP平面型PIN光电二极管。器件光敏面直径为75μm,采用Zn扩散形成PN结,-6V偏置下其暗电流低达8~13nA;反向击穿电压为60V(1μA)。在没有增透膜时,对1.3μm注入光响应度为0.56A/W,光谱响应范围为0.90~1.70μm。 【英文摘要】 Planar In/InGaAs/InP heterostructure photodiodes are fabricated using LP-MOCVD.The 75 μm diameter device with a PN junction formed by Zn diffusion shows low dark current of 8 ̄13 nA at bias voltage of -6V.The breakdown voltage is 60 V(1 μA) and the range of spectral response is λ=0. 90 ̄1.70μm and photodiode response is 0.56 A/W at the 1.3 μm wavelength.zh_CN
dc.description.sponsorship福建省自然科学基金zh_CN
dc.language.isozhzh_CN
dc.publisher《半导体光电》编辑部zh_CN
dc.subject半导体器件zh_CN
dc.subject半导体工艺zh_CN
dc.subject半导光电二极管zh_CN
dc.subjectSemiconductor Deviceszh_CN
dc.subjectSemiconductor Technologyzh_CN
dc.subjectPhotodiodeszh_CN
dc.titleLP-MOCVD制作InGaAs/InPPIN光电二极管zh_CN
dc.title.alternativeInGaAs/InP PIN photodiodes fabricated by LP-MOCVDzh_CN
dc.typeArticlezh_CN


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record