Show simple item record

dc.contributor.author王仁智
dc.contributor.author黄美纯
dc.contributor.author柯三黄
dc.contributor.author李开航
dc.date.accessioned2011-06-22T01:18:49Z
dc.date.available2011-06-22T01:18:49Z
dc.date.issued1995-11
dc.identifier.citation固体电子学研究与进展,1995(4):313-318zh_CN
dc.identifier.issn1000-3819
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9710
dc.description.abstract【中文摘要】 讨论应变层异质结价带偏移的剪裁、设计方法,研究Si/Ge应变层异质结价带偏移设计参数与应变条件的关系,基于异质结中平均键能“对齐”,得到适用于Si/Ge异质结价带偏移剪裁与设计的计算公式和图表。 【英文摘要】 In this paper, the tailoring of valence-band offsets at strained St/Ge interfaces is discussed. The relationship between the band tailoring parameters and strain condition for Si and Ge strained-layer in Si/Ge is researched. Based on the alignment of average-bond-energy E. at Si/Ge interfaces, we get the formula and chart which are applicable to the artificial tailoring of valence-band offsets.zh_CN
dc.description.sponsorship国家和福建省自然科学基金zh_CN
dc.language.isozhzh_CN
dc.publisher《固体电子学研究与进展》编辑部zh_CN
dc.subjectSi/Ge异质结zh_CN
dc.subject价带偏移zh_CN
dc.subjectSi/Ge Heterojunctionzh_CN
dc.subjectValence-Band Offsetszh_CN
dc.titleSi/Ge应变层异质结价带偏移的剪裁与设计zh_CN
dc.title.alternativeThe Tailoring of Valence-Band Offsets at Strained Si/Ge Interfaceszh_CN
dc.typeArticlezh_CN


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record