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dc.contributor.author柯三黄
dc.contributor.author黄美纯
dc.contributor.author王仁智
dc.date.accessioned2011-06-22T00:59:44Z
dc.date.available2011-06-22T00:59:44Z
dc.date.issued1995-03
dc.identifier.citation厦门大学学报(自然科学版),1995(2):182-188zh_CN
dc.identifier.issn0438-0479
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9705
dc.description.abstract【中文摘要】 采用内部求和空d轨道处理下的线性丸盒轨道方法,对以InAs为衬底和以GaAs为衬底以及InAs层和GaAs层自由形变三种不同的应变状态下的超晶格(InAs)n/(GaAs)n(00l),(n=1,2,3,4,5)的电子结构进行了全面的第一性原理计算,得出了其能带结构、带隙值及态密度分布,考察了各能隙随层厚的变化规律以及带隙的应变效应,所得结果与光致发光实验数据以及从头计算赝势方法对以GaAs为衬底的单层超晶格(InA)1/(GaAs)1的计算结果相一致. 【英文摘要】 Report ab inltio studies on the electrdnic structures of strained-layer superlat-tices(SLS’s)(InAs)_n/(GaAs)_n/(00l), (n=1~5)under three different strain conditions:grownepitaxially on an InAs-substrate;grown epitaxially on a GaAs-substrate and free-standing mode,by making use of the linearized-muffin-tin-orbitals band structure method within an internalsummation approach for empty d orHtals. The dependence of the energy gaps at the high sym-metry points in Brillouin zone on layer thickness,and the strain e...zh_CN
dc.description.sponsorship国家和福建省自然科学基金zh_CN
dc.language.isozhzh_CN
dc.publisher《厦门大学学报(自然科学版)》编辑部zh_CN
dc.subject应变层超晶格zh_CN
dc.subject电子结构zh_CN
dc.subject第一性原理计算zh_CN
dc.subjectstrained-layer superlatticeszh_CN
dc.subjectElectronic structurezh_CN
dc.subjectAb initio calculationzh_CN
dc.title不同应变状态下超晶格InAs/GaAs的电子结构zh_CN
dc.title.alternativeElectronic Structures of Strained-layer Superlattices InAs/GaAs Under Different Strain Conditionszh_CN
dc.typeArticlezh_CN


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