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dc.contributor.author王小军
dc.contributor.author刘伟
dc.contributor.author胡雄伟
dc.contributor.author王启明
dc.contributor.author黄美纯
dc.date.accessioned2011-06-20T08:03:30Z
dc.date.available2011-06-20T08:03:30Z
dc.date.issued1996-12
dc.identifier.citation光子学报,1996(12):1089-1094zh_CN
dc.identifier.issn1004-4213
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9670
dc.description.abstract【中文摘要】 本文中,发现在In_xGa_(1-x)As缓冲层上非故意掺杂的InyGa_(1-y)As/(Al)GaAs超晶格样品中存在着两个互相反向的自建电场区,一个位于样品表面,另一个位于In_xGa_(1-x)As缓冲层和超晶格界面.据此,合理地解释了样品的光伏测试结果,并对此类样品的MOCVD生长工艺给予指导. 【英文摘要】 It is found that there are two intrinsic electric field regions in samples of InyGa1-yAs/GaAssuperlattices on InxGa1-xAs buffer layer.The electric field in these two regions, with one locating atthe surface and another locating at the interface between the InyGa1-yAs /GaAs superlattices and theInxGa1-x As buffer layer,has contrary direction each other. Based on this model,we can give a goodexplanation to the photovoltaic spectra of these samples.zh_CN
dc.language.isozhzh_CN
dc.publisher《光子学报》编辑部zh_CN
dc.subject光伏测量zh_CN
dc.subjectMOCVDzh_CN
dc.subjectInGaAs应变量子阱zh_CN
dc.subjectPhotovoltaic measurementzh_CN
dc.subjectMOCVDzh_CN
dc.subjectInGaAs/GaAs strained quantum well;zh_CN
dc.titleIn_xGa_(1-x)As缓冲层上In_yGa_(1-y)As/(Al)Gazh_CN
dc.title.alternativeTHE PHOTOVOLTAIC MEASUREMENTS OF InyGa1-yAs/GaAs SUPEKLATTICES ON InxGa1-xAs BUFFER LAYERzh_CN
dc.typeArticlezh_CN


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