| dc.contributor.author | 王小军 | |
| dc.contributor.author | 刘伟 | |
| dc.contributor.author | 胡雄伟 | |
| dc.contributor.author | 王启明 | |
| dc.contributor.author | 黄美纯 | |
| dc.date.accessioned | 2011-06-20T08:03:30Z | |
| dc.date.available | 2011-06-20T08:03:30Z | |
| dc.date.issued | 1996-12 | |
| dc.identifier.citation | 光子学报，1996（12）：1089-1094 | zh_CN |
| dc.identifier.issn | 1004-4213 | |
| dc.identifier.uri | https://dspace.xmu.edu.cn/handle/2288/9670 | |
| dc.description.abstract | 【中文摘要】 本文中，发现在Ｉｎ＿ｘＧａ＿(１－ｘ)Ａｓ缓冲层上非故意掺杂的ＩｎｙＧａ＿(１－ｙ)Ａｓ／（Ａｌ）ＧａＡｓ超晶格样品中存在着两个互相反向的自建电场区，一个位于样品表面，另一个位于Ｉｎ＿ｘＧａ＿(１－ｘ)Ａｓ缓冲层和超晶格界面．据此，合理地解释了样品的光伏测试结果，并对此类样品的ＭＯＣＶＤ生长工艺给予指导．
【英文摘要】 It is found that there are two intrinsic electric field regions in samples of InyGa1-yAs/GaAssuperlattices on InxGa1-xAs buffer layer.The electric field in these two regions, with one locating atthe surface and another locating at the interface between the InyGa1-yAs /GaAs superlattices and theInxGa1-x As buffer layer,has contrary direction each other. Based on this model,we can give a goodexplanation to the photovoltaic spectra of these samples. | zh_CN |
| dc.language.iso | zh | zh_CN |
| dc.publisher | 《光子学报》编辑部 | zh_CN |
| dc.subject | 光伏测量 | zh_CN |
| dc.subject | MOCVD | zh_CN |
| dc.subject | InGaAs应变量子阱 | zh_CN |
| dc.subject | Photovoltaic measurement | zh_CN |
| dc.subject | MOCVD | zh_CN |
| dc.subject | InGaAs/GaAs strained quantum well; | zh_CN |
| dc.title | In_xGa_（1－x）As缓冲层上In_yGa_（1－y）As／（Al）Ga | zh_CN |
| dc.title.alternative | THE PHOTOVOLTAIC MEASUREMENTS OF InyGa1-yAs/GaAs SUPEKLATTICES ON InxGa1-xAs BUFFER LAYER | zh_CN |
| dc.type | Article | zh_CN |
