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dc.contributor.author柯三黄
dc.contributor.author王仁智
dc.contributor.author黄美纯
dc.date.accessioned2011-06-20T07:47:42Z
dc.date.available2011-06-20T07:47:42Z
dc.date.issued1996-03
dc.identifier.citation厦门大学学报(自然科学版),1996(2):204-209zh_CN
dc.identifier.issn0438-0479
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9666
dc.description.abstract【中文摘要】 把原子集团展开方法同平均键能方法相结合,建立了一种研究合金型应变层异质界面价带偏移的方法.应用此方法对InxGa1-xAs/GaAs系统分别计算了以GaAs和以InxGa1-xAs为衬底的两种不同的应变状态下的价带偏移(△Ev)随合金组份的变化规律.结果表明,由于应变的引入,该系统的面△Ev~X表现出大的非线性,且这一关系受到应变状态的显著影响.通过改变应变状态可使其为Ⅰ型或Ⅱ型超晶格以及金属.部分结果与有关的实验值和理论结果相符合. 【英文摘要】 A theoretical method for determining the valence-band offset (VBO) at strained alloy type heterojunctions is presented by combining the cluster expansion method and average-bond-energy method. Adopting this method; the VBO at InxGa1-xAs/GaAs system as a function of the alloy composition x is determined for two different strain conditions. It is shown that this variaton is in large nonlinearity due to the introduction of the elastic strain; and is exceedingly modulated by the strain condition. Present resul...zh_CN
dc.description.sponsorship国家自然科学基金,福建省自然科学基金zh_CN
dc.language.isozhzh_CN
dc.publisher《厦门大学学报(自然科学版)》编辑部zh_CN
dc.subject价带偏移zh_CN
dc.subject应变层超晶格zh_CN
dc.subject混晶zh_CN
dc.subjectvalence-band offsetzh_CN
dc.subjectStrained-layer superiatticeszh_CN
dc.subjectAlloyzh_CN
dc.title原子集团展开和平均键能方法在In_xGa_(1-x)As/GaAs系统中的应用zh_CN
dc.title.alternativeApplication of Cluster Expansion and Average-bond-energy Method to In_x.Ga_(1-x)As/GaAs Systemzh_CN
dc.typeArticlezh_CN


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