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dc.contributor.author陈龙海
dc.contributor.author陈松岩
dc.contributor.author彭宇恒
dc.contributor.author刘式墉
dc.contributor.author黄美纯
dc.date.accessioned2011-06-20T07:43:09Z
dc.date.available2011-06-20T07:43:09Z
dc.date.issued1996-09
dc.identifier.citation厦门大学学报(自然科学版),1996(5):700-704zh_CN
dc.identifier.issn0438-0479
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9665
dc.description.abstract【中文摘要】 针对目前多量子阱激光器结构设计中,忽略了载流子在每个阱内的注入不均匀性的问题,从油松方程和电流连续方程出发,提出每个阱单独考虑的计算方法,从而比较精确地计算出多量子阱激光器的净增益,给出多量子阱激光器的最佳阱数选择,根据设计结果,生长了InGaAsP分别限制量子阱结构.利用质子轰击制得条形量子阱激光器,实现室温连续工作.阈值电流为60mA,激射波长为1.52μm,单面输出外微分量子效率为36%. 【英文摘要】 The nonuniformity of carrier injected to each well was unreasonably neglected in conventional structure design of multiquantum well laser diode. This paper reports an optimization method by calculating separately the contribution of carrier injection of each well to the total net gain for the first time, based on Poisson's equation and continuity. A optimal choice of well number has been therefore given. According to the theoretic results, InGaAsP multiquantum well structure has been grown. The threshold ...zh_CN
dc.description.sponsorship国家自然科学基金zh_CN
dc.language.isozhzh_CN
dc.publisher《厦门大学学报(自然科学版)》编辑部zh_CN
dc.subject多量子阱激光器zh_CN
dc.subject净增益zh_CN
dc.subject载流子注入不均匀性zh_CN
dc.subjectMultiquantum-well laser diodezh_CN
dc.subjectNet gainzh_CN
dc.subjectNonuniformity of carrier injectionzh_CN
dc.titleInGaAsP多量子阱结构激光器阱数设计与制备zh_CN
dc.title.alternativeThe Choice of Well Number and Fabrication of InGaAsP Multiquantum-well Laser Diodeszh_CN
dc.typeArticlezh_CN


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