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dc.contributor.author王仁智
dc.contributor.author郑永梅
dc.contributor.author柯三黄
dc.contributor.author黄美纯
dc.contributor.author朱梓忠
dc.date.accessioned2011-06-20T07:28:04Z
dc.date.available2011-06-20T07:28:04Z
dc.date.issued1996-06
dc.identifier.citation计算物理,1996(2):136-140zh_CN
dc.identifier.issn1001-246X
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9661
dc.description.abstract【中文摘要】 在应变异质结价带偏移从头算赝势法的理论计算中,建议一种以平均键能为参考能级的△E_v 值理论计算方法,该方法在以 Si 为衬底、以 Ge 为衬底和自由共度生长等3种不同应变情况的 Si/Ge 异质结价带偏移△E_v 值计算中,分别得到0.731eV、0.243eV 和0.521eV 的计算结果。 【英文摘要】 Based on an ab initio pseudopotentials band structure method,a theoretical approach of tak- ing the average-band energy as a energy reference is suggested to determine the valence-band offsets at Si/ Ge heterojunctions under three different strain conditions:using Si as a substrate,using Ge as a substrate and Si-layer,Ge-layer deforming freely.The results are 0.731eV,0.243eV and 0.521eV respectively,in good agreement with relevant experimental values.zh_CN
dc.description.sponsorship国家和福建省自然科学基金资助课题zh_CN
dc.language.isozhzh_CN
dc.publisher《计算物理》编辑部zh_CN
dc.subjectGe/Si异质结zh_CN
dc.subject价带偏移zh_CN
dc.subject理论计算zh_CN
dc.subjectGe/Si heterojunctionzh_CN
dc.subjectValence-band offsetszh_CN
dc.subjectTheoretical calculationzh_CN
dc.titleSi/Ge应变层异质结的价带偏移理论计算zh_CN
dc.title.alternativeTHEORETICAL STUDIES ON THE VALENCE-BAND OFFSETS AT Si/Ge HETEROJUNCTIONSzh_CN
dc.typeArticlezh_CN


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