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dc.contributor.author陈龙海
dc.contributor.author刘宝林
dc.contributor.author陈松岩
dc.contributor.author黄美纯
dc.date.accessioned2011-06-20T07:00:13Z
dc.date.available2011-06-20T07:00:13Z
dc.date.issued1997-03
dc.identifier.citation厦门大学学报(自然科学版),1997(2):209-215zh_CN
dc.identifier.issn:0438-0479
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9655
dc.description.abstract【中文摘要】 利用K·P方法计算了阱宽10.0nm的InGaAs/InP应变量子阱在1%压缩应变、无应变和1%伸张应变三种情况下的能带结构及其态密度.结果表明在阱宽较宽时,伸张应变在13.5~13.23meV能量范围之内子带较少,而在13.32~-38meV能量内,具有比无应变时较低的的态密度.从能带角度考虑,在伸张应变时,利用增大阱宽可以改善器件性能 【英文摘要】 The energy bands and state density of InGaAs/InP quantum well with10.0 nm well width under 1.0 % extended ,0 % and 1 % compress strains were calculated. It is found that there are very small state density in extended strained quantum well with very large energy range. So, by using extended strain at large width ,quantum well laser device characters can be improved.zh_CN
dc.description.sponsorship国家和福建省自然科学基金zh_CN
dc.language.isozhzh_CN
dc.publisher《厦门大学学报(自然科学版)》编辑部zh_CN
dc.subjectK·P方法zh_CN
dc.subjectInGaAs/InPzh_CN
dc.subject量子阱zh_CN
dc.subject能带zh_CN
dc.subjectAKK→] · methodzh_CN
dc.subjectInGaAs/InPzh_CN
dc.subjectStrained quantum wellzh_CN
dc.subjectEnergy bandszh_CN
dc.title利用K·P方法计算InGaAs/InP应变量子阱的能带zh_CN
dc.title.alternativeThe Calculation of InGaAs/InP Strained Quantum Well Energy Bandszh_CN
dc.typeArticlezh_CN


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