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dc.contributor.author陈松岩
dc.contributor.author陈龙海
dc.contributor.author黄美纯
dc.contributor.author刘宝林
dc.contributor.author洪火国
dc.contributor.author李玉东
dc.contributor.author王本忠
dc.contributor.author刘式墉
dc.date.accessioned2011-06-20T01:26:57Z
dc.date.available2011-06-20T01:26:57Z
dc.date.issued1997-05
dc.identifier.citation厦门大学学报(自然科学版),1997(3):359-363zh_CN
dc.identifier.issn0438-0479
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9644
dc.description.abstract【中文摘要】 利用金属有机气相沉积技术生长InGaAsP/InP多量子阱结构,通过改变生长程序,得到了优化的陡峭量子阱界面.并利用光致发光(PL)和X射线双晶衍射对其界面质量分析,X射线双晶衍射表明界面起伏为一个原子层厚度,在10K温度下PL谱半峰高宽(FWHM)为7meV 【英文摘要】 Multi quantum well interface quality is one of key factors that affect device performance. Metalorganic vapor phase epitaxial (MOVPE) grown InGaAsP/InP multi quantum well structure are studied. Abruptness optimization of interfaces is carried out by means of a different gas switching sequences. Analysis of x-ray and photoluminescence (PL) are used to provide detailed information about the interfaces. Measured and simulated rocking curves of Xray diffraction show monolayer fluctuations at the interfaces...zh_CN
dc.description.sponsorship福建省青年重点基金zh_CN
dc.language.isozhzh_CN
dc.publisher《厦门大学学报(自然科学版)》编辑部zh_CN
dc.subject多量子阱zh_CN
dc.subject界面zh_CN
dc.subject金属有机气相沉积zh_CN
dc.subjectMulti quantum wellzh_CN
dc.subjectInterfaceszh_CN
dc.subjectMOVPEzh_CN
dc.title多量子阱结构的MOVPE生长zh_CN
dc.title.alternativeHigh quality Multi Quantum Well Structure by MOVPEzh_CN
dc.typeArticlezh_CN


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