高性能InP/InP、InGaAs/InP体材料LP-MOCVD生长
Near Infra red Electroluminescence of ZnS∶Er 3+ Thin Film
Abstract
【中文摘要】 给出利用低压金属有机化合物化学汽相沉积(LP-MOCVD)生长技术在InP衬底上生长InP、InGaAs的条件,研究了InP/InP的生长特性、InGaAs/InP的组份控制、生长特性及生长温度对InGaAs特性的影响.发现InGaAs/InP最佳生长温度为640℃,得到InGaAs/InP16K光荧光(PL)谱全高半峰宽为32.0nm,InP/InP室温霍尔迁移率为4360cm2/Vs,背景掺杂浓度为5×1014cm-3,X光双晶衍射全高半峰宽为21".
【英文摘要】 Near infra red electroluminescent characteristics of the zinc sulfide thin film devices doped with erbium, fabricated by thermal evaporation with two boats, are reported. The study of the microstructure of the film was carried out by using X ray diffraction method.The effects of the microstructure of the film doped with erbium on luminescence are pointed out.