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dc.contributor.author陈松岩
dc.contributor.author刘宝林
dc.contributor.author黄美纯
dc.contributor.author彭宇恒
dc.contributor.author刘式墉
dc.date.accessioned2011-06-20T01:09:16Z
dc.date.available2011-06-20T01:09:16Z
dc.date.issued1998-04
dc.identifier.citation半导体光电,1998(2):107-110,115zh_CN
dc.identifier.issn1001-5868
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9642
dc.description.abstract【中文摘要】 根据对InGaAsP-InP分别限制量子阱激光器结构的注入效率的分析和利用X射线衍射对InGaAsP-InP20个周期的多量子阱结构异质界面的研究,设计、制备了4个阱的InGaAsP-InP分别限制量子阱激光器结构。利用质子轰击制得条形激光器。阈值电流为100mA,直流室温连续工作。单面输出外微分量子效率为36%。 【英文摘要】 Based on the analysis of injection efficiency for InGaAsP/InP SCH - QW laser and the research on X - ray diffraction kinetic simulation, a four - well InGaAsP - InP MQW laser structure is designed and fabricated. A stripe laser under CW operation with threshold as low as 100 mA is also obtained by means of proton implantation with single - side external differential quantum efficiency of 36%.zh_CN
dc.description.sponsorship福建省自然科学基金;国家自然科学基金zh_CN
dc.language.isozhzh_CN
dc.publisher《半导体光电》编辑部zh_CN
dc.subject多量子阱激光器zh_CN
dc.subject载流子注入效率zh_CN
dc.subjectX射线衍射运动学模拟zh_CN
dc.subjectMQW Laserzh_CN
dc.subjectCarrier Injection Efficiencyzh_CN
dc.subjectX-ray Diffraction Kinetic Simulationzh_CN
dc.titleInGaAs/InP分别限制量子阱激光器的阱数优化设计和实验制备zh_CN
dc.title.alternativeOptimum design of the well number for InGaAsP/InP SCH QW laser and its fabricationzh_CN
dc.typeArticlezh_CN


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