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dc.contributor.author刘宝林
dc.contributor.author黄美纯
dc.date.accessioned2011-06-20T00:44:53Z
dc.date.available2011-06-20T00:44:53Z
dc.date.issued1998-02
dc.identifier.citation量子电子学报,1998(1):15-21zh_CN
dc.identifier.issn1007-5461
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9638
dc.description.abstract【中文摘要】 利用K·P方法计算了InGaAs/InP的10.0nm阱党应变量子讲在1%压缩应变、无应变和1%伸张应变三种情况下的的能带结构及其态密度。结果表明在阱宽较宽时,伸张应变在开始很大能量之内子带较少,在一段能量范围之内,具有比无应变时小的态密度,因此从能带角度考虑,在伸张应变时,利用增大阱宽将可以改善器件性能。 【英文摘要】 We calculated the energy bands.and state density of InGaAs/InP quantum wellwith 10.0 nm well width under 1.0% extended, 0% and 1% compress strains. It is foundthat there are very small state densities in extended strained quantum well with very largeenergy range. So, by using extended strain at large width, we can improve quantum welllaser device characters.zh_CN
dc.description.sponsorship福建省自然科学基金;国家自然科学基金zh_CN
dc.language.isozhzh_CN
dc.publisher《量子电子学报》编辑部zh_CN
dc.subjectK·P方法zh_CN
dc.subjectInGaAs/InPzh_CN
dc.subject量子阱zh_CN
dc.subject能带zh_CN
dc.subjectK·P methodzh_CN
dc.subjectstrained quantum wellzh_CN
dc.subjectenergy bandszh_CN
dc.titleInGaAs/InP应变量子阱的能带比较zh_CN
dc.title.alternativeThe Calculation of InGaAs/InP Strained Quantum Well Energy Bandszh_CN
dc.typeArticlezh_CN


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