Show simple item record

dc.contributor.author张志鹏
dc.contributor.author沈耀文
dc.contributor.author黄美纯
dc.date.accessioned2011-06-20T00:29:09Z
dc.date.available2011-06-20T00:29:09Z
dc.date.issued1998-12
dc.identifier.citation量子电子学报,1998(6):549-552zh_CN
dc.identifier.issn1007-5461
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9636
dc.description.abstract【中文摘要】 本文使用LMTO-ASA方法计算ZnS掺入激活剂铜所形成的铜发光中心的电子结构,分析了两种不同铜价态的影响.结果表明:尽管两种情形下禁带中铜3d能级均靠近价带顶,但掺杂二价铜时发光中心的能级结构符合Schon-Klasens模型,而掺杂一价钢的结果支持Williams-Prener模型. 【英文摘要】 The electronic structures of luminescence centers in wurtzite ZnS doped withcopper are studied by using first--principles linear muffin ~tin--orbital method corn-biniflg atomic sphere approximation. The effect of monovalent or divalent oxidationstate of copper has been considered. Although tile levels of Cu 3d--like states appear in the forbidden gap and are located near the top of valence band in bothcasesg our results for ZnS:Cu2+ support the Sob6n--Klasens model while calculationsfor ZnS.Cu,:Vs (where Vs...zh_CN
dc.description.sponsorship国家高技术863-715-10资助zh_CN
dc.language.isozhzh_CN
dc.publisher《量子电子学报》编辑部zh_CN
dc.subject发光中心zh_CN
dc.subject电子结构zh_CN
dc.subjectZnS掺铜zh_CN
dc.subjectluminescence centerzh_CN
dc.subjectelectronic structurezh_CN
dc.subjectZnS doped with copperzh_CN
dc.title铜价态对Zns掺铜电子结构的影响zh_CN
dc.title.alternativeEfFect of DifFerent Valence-state of Copper on the Electronic Structure of ZnS Doped with Copperzh_CN
dc.typeArticlezh_CN


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record