应变超晶格(In_xGa_(1-x)As)_n/(GaAs)_n(001)的电子结构和光学性质
The Electronic and Optical Properties of the Strained Superlattices (In x Ga 1-x As) n /(GaAs) n (001)
Date
1999-03Collections
- 物理技术－已发表论文 [4223]
Abstract
【中文摘要】 用半经验的紧束缚方法ｓｐ３ｓ＊计算了薄层应变超晶格（ＩｎｘＧａ１－ｘＡｓ）ｎ／（ＧａＡｓ）ｎ（００１）的电子结构．给出了组份Ｘ为０．５３的超晶格（ＩｎｘＧａ１－ｘＡｓ）ｎ／（ＧａＡｓ）ｎ的带隙值随层厚ｎ的变化关系，以及超晶格（ＩｎｘＧａ１－ｘＡｓ）１２／（ＧａＡｓ）１２的带隙值随组份Ｘ的变化关系．在得到超晶格能量本征值和本征函数的基础上，计算了该超晶格系统的光学介电函数虚部，并与体材料ＧａＡｓ和体合金ＩｎｘＧａ１－ｘＡｓ的光学性质作了比较．计算结果表明，应变超晶格在较宽的能量范围有较好的光谱响应．
【英文摘要】 The semi empirical tight binding model sp 3s * was used to calculate the band structure of the thin strained superlattices (In x Ga 1-x As) n /(GaAs) n (001). The band gap of strained (In 0.53 Ga 0.47 As) n /(GaAs) n as a function of layer number n is given out, and the dependence of the band gap of strained (In x Ga 1-x As) 12 /(GaAs) 12 on composition x is also presented.The imaginary parts of dielectric functions for the super...