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dc.contributor.author庄宝煌
dc.contributor.author黄美纯
dc.contributor.author朱梓忠
dc.contributor.author张志鹏
dc.contributor.author李开航
dc.contributor.author吴丽清
dc.date.accessioned2011-06-19T04:58:43Z
dc.date.available2011-06-19T04:58:43Z
dc.date.issued1999-09
dc.identifier.citation厦门大学学报(自然科学版),1999(5):676-681zh_CN
dc.identifier.issn0438-0479
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9617
dc.description.abstract【中文摘要】 建立了 G A T 器件集电结耗尽层电位分布和电场分布的二维解析模型,定量研究了 G A T 的栅屏蔽效应的解析表达式并借助计算机对栅屏蔽效应给以证实.该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考. 【英文摘要】 The two dimensional analytical model of the electric potential and field distribution in GAT′s collector depletion space in the cut off state is derived for the first time.The formula for GAT′s gate shielding effect is derived and the gate shielding effect is proved by aid of computer quantitatively. This model will provide assistance to the optimal design of bipolar power transistor with high frequency as well as high breakdown voltage.zh_CN
dc.description.sponsorship国家自然科学基金,国家高技术研究发展计划zh_CN
dc.language.isozhzh_CN
dc.publisher《厦门大学学报(自然科学版)》编辑部zh_CN
dc.subject功率器件zh_CN
dc.subjectGATzh_CN
dc.subject屏蔽效应zh_CN
dc.subject解析模型zh_CN
dc.subjectPower devicezh_CN
dc.subjectGate shielding effectzh_CN
dc.subjectAnalytical modelzh_CN
dc.title定量分析功率器件GAT的栅屏蔽效应zh_CN
dc.title.alternativeA Quantitative Analysis of the Power Device GAT′s Gate Shielding Effectzh_CN
dc.typeArticlezh_CN


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