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dc.contributor.author庄宝煌
dc.contributor.author黄美纯
dc.contributor.author朱梓忠
dc.contributor.author张志鹏
dc.contributor.author李开航
dc.contributor.author吴丽清
dc.date.accessioned2011-06-19T04:48:25Z
dc.date.available2011-06-19T04:48:25Z
dc.date.issued1999-11
dc.identifier.citation厦门大学学报(自然科学版),1999(6):831-836zh_CN
dc.identifier.issn0438-0479
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9616
dc.description.abstract【中文摘要】 通过作者最近建立的关于GAT器件集电结耗尽层电位分布和电场分布的二维解析模型,定量研究了GAT的基区穿通电压VPI以及GAT的雪崩击穿特性并且解释了该器件实现高击穿电压与高电流增益兼容的实验结果 【英文摘要】 By the aid ofthe tw o-dim ensionalanalyticalm odelofthe electricpotential and field distribution in GAT′s collector depletion space in the cut-offstate w hich was estab- lished by the w riters lately, the GAT′s base region punchthrough voltage and the GAT′s avalanche breakdown characteristics w as investigated quantitatively, and the experim entalre- sults, which conclude that the GATs can realize the com patibility betw een high breakdow n voltage and high currentgain, w as explained.zh_CN
dc.description.sponsorship国家自然科学基金!(69896260-06);国家高技术研究发展计划资助!(863-715-010)zh_CN
dc.language.isozhzh_CN
dc.publisher《厦门大学学报(自然科学版)》编辑部zh_CN
dc.subject功率器件zh_CN
dc.subjectGATzh_CN
dc.subject基区穿通电压zh_CN
dc.subject频率zh_CN
dc.subject雪崩击穿电压zh_CN
dc.subject电流增益zh_CN
dc.subject兼容性zh_CN
dc.subjectPow er devicezh_CN
dc.subjectBase region punchthrough voltagezh_CN
dc.subjectFrequencyzh_CN
dc.subjectAvalanche breakdow n voltagezh_CN
dc.subjectCurrentgainzh_CN
dc.subjectCom patibilityzh_CN
dc.title用GAT器件实现高电压与高频率、高电流增益兼容的定量分析zh_CN
dc.title.alternativeA Quantitative Analysis of the Compatibility Among High Voltage, High Frequency and High CurrentGain with Device GATzh_CN
dc.typeArticlezh_CN


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