用GAT器件实现高电压与高频率、高电流增益兼容的定量分析

Abstract

【中文摘要】 通过作者最近建立的关于GAT器件集电结耗尽层电位分布和电场分布的二维解析模型,定量研究了GAT的基区穿通电压VPI以及GAT的雪崩击穿特性并且解释了该器件实现高击穿电压与高电流增益兼容的实验结果 【英文摘要】 By the aid ofthe tw o-dim ensionalanalyticalm odelofthe electricpotential and field distribution in GAT′s collector depletion space in the cut-offstate w hich was estab- lished by the w riters lately, the GAT′s base region punchthrough voltage and the GAT′s avalanche breakdown characteristics w as investigated quantitatively, and the experim entalre- sults, which conclude that the GATs can realize the com patibility betw een high breakdow n voltage and high currentgain, w as explained.