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dc.contributor.author庄宝煌
dc.contributor.author黄美纯
dc.contributor.author朱梓忠
dc.contributor.author李开航
dc.contributor.author吴丽清
dc.date.accessioned2011-06-19T04:38:35Z
dc.date.available2011-06-19T04:38:35Z
dc.date.issued2000-04
dc.identifier.citation半导体学报,2000(4):388-393zh_CN
dc.identifier.issn0253-4177
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9615
dc.description.abstract【中文摘要】 建立了 GAT器件集电结耗尽层电位分布和电场分布的二维解析模型 ,定量研究了 GAT的栅屏蔽效应和 GAT的基区穿通电压 VPI,并且解释了该器件实现高频率与高电压兼容的实验结果 .该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考 【英文摘要】 The two\|dimensional analytical model of the electric potential and field distribution in GAT's collector depletion layer in the cut\|off state is derived for the first time.The GAT's gate shielding effect and the GAT's base region punchthrough voltage V PI are analysed quantitatively, and the experimental results that the GATs can realize the compatibility between high frequency and high voltage is explained. This model will provide assistance to the optimal design of bipolar power transistor with...zh_CN
dc.description.sponsorship国家自然科学基金!( No.69896260 -06); 国家高技术研究发展计划( 863-715-010 )zh_CN
dc.language.isozhzh_CN
dc.publisher《半导体学报》编辑部zh_CN
dc.subject高频高压特性zh_CN
dc.subjectGATzh_CN
dc.subject模型zh_CN
dc.subjecthigh-frequency and high voltage characteristicszh_CN
dc.subjectgate associated transistorszh_CN
dc.subjectmodelzh_CN
dc.titleGAT双极晶体管的高频高压兼容特性zh_CN
dc.title.alternativeHigh-Frequency and High-Voltage Characteristics on Gate Associated Transistorszh_CN
dc.typeArticlezh_CN


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