GAT双极晶体管的高频高压兼容特性

Abstract

【中文摘要】 建立了 GAT器件集电结耗尽层电位分布和电场分布的二维解析模型 ,定量研究了 GAT的栅屏蔽效应和 GAT的基区穿通电压 VPI,并且解释了该器件实现高频率与高电压兼容的实验结果 .该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考 【英文摘要】 The two\|dimensional analytical model of the electric potential and field distribution in GAT's collector depletion layer in the cut\|off state is derived for the first time.The GAT's gate shielding effect and the GAT's base region punchthrough voltage V PI are analysed quantitatively, and the experimental results that the GATs can realize the compatibility between high frequency and high voltage is explained. This model will provide assistance to the optimal design of bipolar power transistor with...