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GAT实现高频率与高基区穿通电压兼容特性分析
An Analysis of GATs Compatibility Between High Frequency and High Base Region Punchthrough Voltage

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GAT实现高频率与高基区穿通电压兼容特性分析.pdf (629.4Kb)
Date
2000-05
Author
庄宝煌
黄美纯
朱梓忠
李开航
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  • 物理技术-已发表论文 [4223]
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Abstract
【中文摘要】 通过作者最近建立的关于 GAT器件集电结耗尽层电位分布和电场分布的二维解析模型 ,定量研究了 GAT的基区穿通电压 VPI,并且解释了该器件实现高频率与高电压兼容的实验结果。 【英文摘要】 By the aid of the two dimensional analytical model of the electric potential and field distribution in GATs collector depletion space in a cut off state which was established by the writers lately,the GATs base region punchthrough voltage V PI was investigated quantitatively,and the experimental results which concluded that the GATs can realize the compatibility between high frequency and high voltage were explained.
Citation
固体电子学研究与进展,2000(2):190-194
URI
https://dspace.xmu.edu.cn/handle/2288/9606

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