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dc.contributor.author庄宝煌
dc.contributor.author黄美纯
dc.contributor.author朱梓忠
dc.contributor.author李开航
dc.date.accessioned2011-06-17T01:24:09Z
dc.date.available2011-06-17T01:24:09Z
dc.date.issued2000-05
dc.identifier.citation固体电子学研究与进展,2000(2):206-210zh_CN
dc.identifier.issn1000-3819
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9604
dc.description.abstract【中文摘要】 通过作者最近建立的关于电力半导体器件 GAT的集电结耗尽层电位分析和电场分布的二维解析模型定量研究了 GAT的雪崩击穿特性 ,并且定量解释了该器件实现高击穿电压与高电流增益兼容的实验结果。 【英文摘要】 By the aid of the two dimensional analytical model [5] of the electric potential and field distribution in power semiconductor GATs collector depletion space in a cut off state which was established by the writers lately,the GATs avalanche breakdown characteristics was investigated quantitatively,and the experimental results which concluded that the GATs can realize the compatibility between high breakdown voltage and high current gain,were...zh_CN
dc.description.sponsorship国家自然科学基金!( No.69896260-06 );国家高技术研究发展计划( 863-715-010 )zh_CN
dc.language.isozhzh_CN
dc.publisher《固体电子学研究与进展》编辑部zh_CN
dc.subject功率器件zh_CN
dc.subject联栅晶体管zh_CN
dc.subject电流增益zh_CN
dc.subject雪崩击穿电压zh_CN
dc.subject兼容性zh_CN
dc.subjectpower devicezh_CN
dc.subjectGATzh_CN
dc.subjectcurrent gainzh_CN
dc.subjectavalanche breakdown voltagezh_CN
dc.subjectcompatibilityzh_CN
dc.titleGAT实现高电流增益与高雪崩击穿电压兼容特性分析zh_CN
dc.title.alternativeAn Analysis of GATs Compatibility Between High Current Gain and High Avalanche Breakdown Voltagezh_CN
dc.typeArticlezh_CN


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