Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy
- 化学化工－已发表论文 
The grown-in oxygen precipitates in conventional Czochralski (CZ) silicon and nitrogen-doped Czochralski (NCZ) silicon have been investigated by means of transmission electron microscopy (TEM). Tiny oxygen precipitates about 5 nm in size were observed in the NCZ specimens. It is believed that the oxygen precipitates may have grown from the heterogeneous nuclei of nitrogen-related complexes formed at a low temperature of 650 degrees C.