The catalyst-assisted synthesis of high quality CdS single-crystal nanowires through an epitaxy mechanism
- 化学化工－已发表论文 
High-quality wurtzite CdS nanowires have been synthesized by thermal evaporation of CdS powder onto Si substrate in the presence of Au catalyst at 650 degrees C by using pure H-2 as a carrier gas. The nanowires were 10 nrn in diameter and a few tens of micrometers in length. XRD patterns demonstrated that as prepared CdS is a pure crystalline material. High-resolution transmission electron microscopy of the materials showed that all CdS nanowires grew along 0001). According to analysis of selective area electron diffraction patterns taken from the interface, we proposed that there is a kind of epitaxy relationship in the interface region between Au catalyst and CdS grown, i.e., (0001)(CdS) parallel to (111)Au, and (CdS) parallel to (Au).