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dc.contributor.authorSun Lan
dc.contributor.author孙岚
dc.contributor.authorZuo Juan
dc.contributor.author左娟
dc.contributor.authorLai Yue-Kun
dc.contributor.author赖跃坤
dc.contributor.authorNie Cha-Geng
dc.contributor.author聂茶庚
dc.contributor.authorLin Chang-Jian
dc.contributor.author林昌健
dc.date.accessioned2011-05-29T15:12:19Z
dc.date.available2011-05-29T15:12:19Z
dc.date.issued2007
dc.identifier.citationACTA PHYSICO-CHIMICA SINICA,2007,23(10):1603-1606zh_CN
dc.identifier.issn1000-6818
dc.identifier.urihttp://dx.doi.org/doi:CNKI:SUN:WLHX.0.2007-10-021
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9255
dc.description.abstractThe anatase TiO2 nanowire arrays with 60 ran diameter and 20 nm diameter were prepared within the nanochannels of anodic aluminum oxide (AAO) template by an electrochemically induced sol-gel method. Atomic force microscopy (AFM) technique was applied to map topographic image at half-contact mode and to measure current-voltage characteristics of individual TiO2 nanowire at contact mode. The I-V characteristics of individual TiO2 nanowire by AFM revealed semiconductor characteristics. The bias voltage resulting in a measurable current on individual TiO2 nanowire was much lower than that on the bulk TiO2 materials, and its value increased with the diameter of individual nanowire decreasing.zh_CN
dc.language.isoenzh_CN
dc.publisherPEKING UNIV PRESSzh_CN
dc.subjectindividual nanowire in one dimensionzh_CN
dc.subjectTiO2zh_CN
dc.subjectelectrical transport propertyzh_CN
dc.subjectI-Vcurvezh_CN
dc.titleElectrical transport properties of individual TiO2 nanowire in one dimensionzh_CN
dc.typeArticlezh_CN


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