Charge storage characteristics of Au nanocrystal memory improved by the oxygen vacancy-reduced HfO2 blocking layer
- 物理技术－已发表论文 
This study characterizes the charge storage characteristics of metal/HfO2/Au nanocrystals (NCs)/SiO2/Si and significantly improves memory performance and retention time by annealing the HfO2 blocking layer in O-2 ambient at 400 degrees C. Experimental evidence shows that the underlying mechanism can be effectively applied to reduce oxygen vacancy and suppress unwanted electron trap-assisted tunneling. A memory window of 1 V at an applied sweeping voltage of +/-2 V is also shown. The low program/erase voltage (+/-2 V) and the promising retention performances indicate the potential application of NCs in low-voltage, non-volatile memory devices.