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dc.contributor.authorJiang, Lin Guizh_CN
dc.contributor.authorKai, Lai Hongzh_CN
dc.contributor.authorCheng, Lizh_CN
dc.contributor.authorYan, Chen Songzh_CN
dc.contributor.authorZhong, Yu Jinzh_CN
dc.contributor.author李成zh_CN
dc.date.accessioned2015-07-22T07:23:30Z
dc.date.available2015-07-22T07:23:30Z
dc.date.issued2008-03zh_CN
dc.identifier.citationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008,23(3)zh_CN
dc.identifier.otherWOS:000254385900011zh_CN
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/91725
dc.description.abstractConsidering tensile-strained p-type Si/Si(1-y)Ge(y) quantum wells grown on a relaxed Si(1-x)Ge(x) ( 0 0 1) virtual substrate ( y < x), the hole subband structure and the effective masses of the first bound hole state in the quantum wells are calculated by using the 6 x 6 k center dot p method. Designs for tensile-strained p-type quantum well infrared photodetectors ( QWIPs) based on the bound-to-quasi-bound transitions are discussed, which are expected to retain the ability of coupling normally incident infrared radiation without any grating couplers, have lower dark current than n-type QWIPs and also have a larger absorption coefficient and better transport characteristics than normal unstrained or compressive-strained p-type QWIPs.zh_CN
dc.language.isoen_USzh_CN
dc.publisherSEMICOND SCI TECHzh_CN
dc.source.urihttp://dx.doi.org/10.1088/0268-1242/23/3/035011zh_CN
dc.subjectINTERSUBBAND ABSORPTIONzh_CN
dc.subjectDARK CURRENTzh_CN
dc.subjectHOLEzh_CN
dc.subjectBANDzh_CN
dc.subjectDETECTORzh_CN
dc.subjectSEMICONDUCTORSzh_CN
dc.subjectSUPERLATTICEzh_CN
dc.subjectPERFORMANCEzh_CN
dc.subjectTRANSITIONzh_CN
dc.titlePreliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetectorzh_CN
dc.typeArticlezh_CN


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