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dc.contributor.authorYang, Weifengzh_CN
dc.contributor.authorZhang, Fengzh_CN
dc.contributor.authorLiu, Zhuguangzh_CN
dc.contributor.authorWu, Zhengyunzh_CN
dc.contributor.author吴正云zh_CN
dc.date.accessioned2015-07-22T07:23:29Z
dc.date.available2015-07-22T07:23:29Z
dc.date.issued2008-04zh_CN
dc.identifier.citationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2008,11(2):59-62zh_CN
dc.identifier.otherWOS:000264742500005zh_CN
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/91722
dc.description.abstract4H-SiC-based metal-semiconductor-metal (MSM) photodetectors (PDs) have been designed, fabricated, and characterized, in which nickel Schottky contacts were needed. Current-voltage and spectral responsivity measurements were carried out at room temperature to character the effect of annealing on the performance of the MSM devices. It was found to improve both Schottky barrier height and ideality factors after annealing at appropriate temperature. The chemical component depth profiles of XPS measurement showed nickel silicides were produced at the interface, leading to improvement of the Ni/4H-SiC contacts and the performance of the PDs. The MSM PDs with RTA had a lower dark current (0.45 pA at 5 V bias voltage), a typical responsivity of 0.094 A/W at 20 V and displayed peak response wavelength at 290 nm. (C) 2008 Published by Elsevier Ltd.zh_CN
dc.language.isoen_USzh_CN
dc.publisherMAT SCI SEMICON PROCzh_CN
dc.source.urihttp://dx.doi.org/10.1016/j.mssp.2008.11.001zh_CN
dc.subjectSPECTRAL RESPONSEzh_CN
dc.subjectHIGH-TEMPERATUREzh_CN
dc.subjectOHMIC CONTACTSzh_CN
dc.subjectUV PHOTODIODESzh_CN
dc.titleEffects of annealing on the performance of 4H-SiC metal-semiconductor-metal ultraviolet photodetectorszh_CN
dc.typeArticlezh_CN


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