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dc.contributor.authorSun, J. W.zh_CN
dc.contributor.authorZhang, B. P.zh_CN
dc.contributor.author张保平zh_CN
dc.date.accessioned2015-07-22T07:23:28Z
dc.date.available2015-07-22T07:23:28Z
dc.date.issued2008-12-03zh_CN
dc.identifier.citationNANOTECHNOLOGY, 2008,19(48)zh_CN
dc.identifier.otherWOS:000260859400011zh_CN
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/91712
dc.descriptionHigh Technology Research and Development of China [2006AA03Z409]; National Natural Science Foundation of China [60876007]zh_CN
dc.description.abstractThe well-width dependence of the exciton-phonon interaction in Mg(0.1)Zn(0.9)O/ZnO single quantum wells (QWs) with a wedged structure was investigated by photoluminescence (PL) measurements at 4 K. Within the Frank-Condon approximation, the Huang-Rhys factor S, as a measure of the coupling strength between the exciton and the longitudinal-optical (LO) phonon, was extracted from the relative intensities between the first-order phonon replica and the zero-phonon peak. It was found that the value of S increased monotonically with the increase of the well width (LW). By studying the excitation-density-dependent PL spectra, this result was successfully explained by taking into account the internal electric field originating from the spontaneous and piezoelectric polarizations. The electric field is expected to push electrons and holes to the opposite sides in the well, and consequently results in the increase of S with increasing LW.zh_CN
dc.language.isoen_USzh_CN
dc.publisherNANOTECHNOLOGYzh_CN
dc.source.urihttp://dx.doi.org/10.1088/0957-4484/19/48/485401zh_CN
dc.subjectROOM-TEMPERATUREzh_CN
dc.subjectEMISSIONzh_CN
dc.subjectZNO/(MGzh_CN
dc.subjectZNOzh_CN
dc.titleWell-width dependence of exciton-longitudinal-optical-phonon coupling in MgZnO/ZnO single quantum wellszh_CN
dc.typeArticlezh_CN


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