RADIATIVE AND NONRADIATIVE RECOMBINATION OF BOUND EXCITONS IN GAP-N 1 TEMPERATURE BEHAVIOR OF ZERO-PHONON LINE AND PHONON SIDE-BAND OF BOUND EXCITONS AND RADIATIVE AND NONRADIATIVE RECOMBINATION OF BOUND EXCITONS IN GAP-N 4 FORMATION OF PHONON SIDE-BA
- 物理技术－已发表论文 
We point out that the experimental data on the temperature dependence of the LO-phonon sidebands of NN4-6 in a recent paper by X. Zhang et al. [Phys. Rev. B 41, 1376 (1990)] are incorrectly analyzed, and that the theory in a closely related paper by Q. Hong, X. Zhang, and K. Dou [Phys. Rev. B 41, 2931 (1990)] is inadequate for explaining the LO-phonon sideband structure and temperature behavior of N-related bound excitons in GaP.