Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery
- 物理技术－已发表论文 
A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated. Under the irradiation of a 4x4 mm(2) planar solid (63)Ni source with an activity of 2 mCi, the open-circuit voltage V(oc) of the fabricated single 2x2 mm(2) cell reaches as high as 1.62 V, the short-circuit current density J(sc) is measured to be 16nA/cm(2). The microbattery has a fill factor of 55%, and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%. The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.