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dc.contributor.authorWang, Shizhong
dc.contributor.author王世忠
dc.contributor.authorWu, Lingli
dc.contributor.authorLiang, Ying
dc.date.accessioned2011-05-24T03:18:18Z
dc.date.available2011-05-24T03:18:18Z
dc.date.issued2007-01
dc.identifier.citationJOURNAL OF POWER SOURCES,2007,166(1):22-29zh_CN
dc.identifier.issn0378-7753
dc.identifier.urihttp://dx.doi.org/doi:10.1016/j.jpowsour.2006.12.090
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/9112
dc.description.abstractLa0.8Sr0.2Ga0.8Mg0.2O3-delta (LSGM8282), La0.8Sr0.2Ga0.8Mg0.15Co0.05O3-delta (LSGMC5) and La0.8Sr0.2Ga0.8Mg0.115Co0.085O3-delta (LSGMC8.5) were prepared using a conventional solid-state reaction. Electrical conductivities and electronic conductivities of the samples were measured using four-probe impedance spectrometry, four-probe dc polarization and Hebb-Wagner polarization within the temperature range of 973-1173 K. The electrical conductivities in LSGMC5 and LSGMC8.5 increased with decreasing oxygen partial pressures especially in the high (> 10(-5) atm) and low oxygen partial pressure regions (< 10(-15) arm). However, the electrical conductivity in LSGM8282 had no dependency on the oxygen partial pressure. At temperatures higher than 1073 K, P-O2 dependencies of the free electron conductivities in LSGM8282, LSGMC5 and LSGMC8.5 were about - 1/4, and P-O2 dependencies of the electron hole conductivities were about 0.25, 0.12 and 0.07, respectively. Oxygen ion conductivities in LSGMC5 and LSGMC8.5 increased with decreasing oxygen partial pressures especially in the high and low oxygen partial pressure regions, which was due to the increase in the concentration of oxygen vacancies. The change in the concentration of oxygen vacancies and the valence of cobalt with oxygen partial pressure were determined using a thermo-gravimetric technique. Both the electronic conductivity and oxygen ion conductivity in cobalt doped lanthanum gallate samples increased with increasing concentration of cobalt, suggesting that the concentration of cobalt should be optimized carefully to maintain a high electrical conductivity and close to 1 oxygen ion transference number. (c) 2007 Elsevier B.V. All rights reserved.zh_CN
dc.language.isoenzh_CN
dc.publisherELSEVIER SCIENCE BVzh_CN
dc.subjectelectrical conductivityzh_CN
dc.subjectHebb-Wagner polarizationzh_CN
dc.subjectoxygen ion conductivityzh_CN
dc.subjectoxygen vacancyzh_CN
dc.subjectlanthanum gallatezh_CN
dc.titleElectrical conductivity of cobalt doped La0.8Sr0.2Ga0.8Mg0.2O3-deltazh_CN
dc.typeArticlezh_CN


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