Controllable set voltage in bilayer ZnO:SiO2/ZnOx resistance random access memory by oxygen concentration gradient manipulation
- 能源院－已发表论文 
In this letter, we investigated oxygen ion concentration gradient method, which can manipulate the set voltage of zinc oxide-doped silicon oxide resistance random access memory. To analyze this method, the ITO/ZnO:SiO2/ZnOx/TiN bilayer structure was proposed and discussed. On the basis of the oxygen ions migration effect, the set voltage of the oxide-based resistive memory can be altered after a bias stress at the TiN electrode. The physical mechanism of the special resistive switching characteristics were depicted by the interaction between [O2-] gradient driving force and electrical force.