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dc.contributor.authorXu, Qiangzh_CN
dc.contributor.authorLa, Ruizh_CN
dc.contributor.authorCheng, Qijinzh_CN
dc.contributor.authorZhang, Zifengzh_CN
dc.contributor.authorHong, Rongdunzh_CN
dc.contributor.authorChen, Xiapingzh_CN
dc.contributor.authorWu, Zhengyunzh_CN
dc.contributor.author程其进zh_CN
dc.contributor.author吴正云zh_CN
dc.date.accessioned2015-07-22T07:07:43Z
dc.date.available2015-07-22T07:07:43Z
dc.date.issued2013zh_CN
dc.identifier.citationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013,24(10):4075-4079zh_CN
dc.identifier.otherWOS:000324325800068zh_CN
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/90264
dc.descriptionNatural Science Foundation of China [61176049]; Natural Science Foundation of Fujian Province [2009J05151]zh_CN
dc.description.abstractZn/ZnO layers were deposited on SiO2/Si substrate by magnetron sputtering at room temperature, and then these layers were annealed at various temperatures from 200 to 400 A degrees C in nitrogen atmosphere for 1 min. The structural and electrical properties of the Zn/ZnO layers before and after annealing are systematically investigated by X-ray diffraction, scanning electron microscopy, current-voltage measurement system, and Auger electron spectroscopy. Current-voltage measurements show that the Zn/ZnO layers exhibit an Ohmic contact behavior. It is shown that, initially, the specific contact resistivity decreases with the increase of the annealing temperature and reaches a minimum value of 9.76 x 10(-5) Omega cm(2) at an annealing temperature of 300 A degrees C. However, with a further increase of the annealing temperature, the Ohmic contact behavior degrades. This phenomenon can be explained by considering the diffusion of zinc interstitials and oxygen vacancies. It is also shown that Zn-rich ZnO thin films can be obtained by annealing Zn on the surface of ZnO film and that good Ohmic contact between Zn and ZnO layers can be observed when the annealing temperature was 300 A degrees C.zh_CN
dc.language.isoen_USzh_CN
dc.publisherSPRINGERzh_CN
dc.source.urihttp://dx.doi.org/10.1007/s10854-013-1363-3zh_CN
dc.subjectN-TYPE ZNOzh_CN
dc.subjectZINC-OXIDEzh_CN
dc.subjectMETALLIC ZNzh_CN
dc.subjectDEPOSITIONzh_CN
dc.subjectDIFFUSIONzh_CN
dc.titleEffect of rapid thermal annealing on Zn/ZnO layerszh_CN
dc.typeArticlezh_CN


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