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dc.contributor.authorSun, Zhimeizh_CN
dc.contributor.authorPan, Yuanchunzh_CN
dc.contributor.authorSa, Baishengzh_CN
dc.contributor.authorZhou, Jianzh_CN
dc.contributor.author孙志梅zh_CN
dc.contributor.author周健zh_CN
dc.date.accessioned2015-07-22T01:36:53Z
dc.date.available2015-07-22T01:36:53Z
dc.date.issued2011zh_CN
dc.identifier.citationFUNCTIONAL AND ELECTRONIC MATERIALS, 2011,687:7-11zh_CN
dc.identifier.otherWOS:000302589200002zh_CN
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/85096
dc.descriptionConference Name:11th International Conference in Asia of the International-Union-of-Materials-Research-Societies. Conference Address: Qingdao, PEOPLES R CHINA. Time:SEP 25-28, 2010.zh_CN
dc.description.abstractOn the basis of ab initio total energy calculations, we have performed an extensive study on the stacking sequence and random occupation of Ge and Sb to make the same layer in stable hexagonal Ge2Sb2Te5 (h-GST), an excellent candidate for phase change random memory applications. The results demonstrate that the atomic arrangements have great effects on lattice parameter c and electronic properties of h-GST. h-GST changes from semiconductor to metallic behavior as varying the atomic sequence.zh_CN
dc.language.isoen_USzh_CN
dc.publisherMATER SCI FORUMzh_CN
dc.source.urihttp://dx.doi.org/10.4028/www.scientific.net/MSF.687.7zh_CN
dc.subjectELECTRON-DIFFRACTIONzh_CN
dc.subjectMOLECULAR-DYNAMICSzh_CN
dc.subjectAPPROXIMATIONzh_CN
dc.titleAb initio study on hexagonal Ge2Sb2Te5-a phase-change material for nonvolatile memorieszh_CN
dc.typeConferencezh_CN


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