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dc.contributor.authorSa, Baishengzh_CN
dc.contributor.authorMiao, Nahihuazh_CN
dc.contributor.authorZhou, Jianzh_CN
dc.contributor.authorSong, Zhitangzh_CN
dc.contributor.authorSun, Zhimeizh_CN
dc.contributor.authorAhuja, Rajeevzh_CN
dc.contributor.author周健zh_CN
dc.contributor.author孙志梅zh_CN
dc.date.accessioned2015-07-22T01:36:53Z
dc.date.available2015-07-22T01:36:53Z
dc.date.issued2010-08zh_CN
dc.identifier.citationJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2010,71(8):1165-1167zh_CN
dc.identifier.otherWOS:000280977000028zh_CN
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/85093
dc.descriptionConference Name:5th International Conference on Study of Matter at Extreme Conditions. Conference Address: Miami, FL. Time:MAR 28-APR 02, 2009.zh_CN
dc.description.abstractOn the basis of an ab initio computational study, the present work provide a full understanding on the atomic arrangements, phase stability as well as electronic structure of Si2Sb2Te5, a newly synthesized phase-change material. The results show that Si2Sb2Te5 tends to decompose into Si1Sb2Te4 or Si1Sb4Te7 or Sb2Te3, therefore, a nano-composite containing Si1Sb2Te4, Si1Sb4Te7 and Sb2Te3 may be self-generated from Si2Sb2Te5. Hence Si2Sb2Te5 based nano-composite is the real structure when Si2Sb2Te5 is used in electronic memory applications. The present results agree well with the recent experimental work. (C) 2010 Elsevier Ltd. All rights reserved.zh_CN
dc.language.isoen_USzh_CN
dc.publisherJ PHYS CHEM SOLIDSzh_CN
dc.source.urihttp://dx.doi.org/10.1016/j.jpcs.2010.03.027zh_CN
dc.subjectRANDOM-ACCESS MEMORYzh_CN
dc.subjectGE-SB-TEzh_CN
dc.subjectDATA-STORAGEzh_CN
dc.titlePhase stability and electronic structure of Si2Sb2Te5 phase-change materialzh_CN
dc.typeConferencezh_CN


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