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Phase stability and electronic structure of Si2Sb2Te5 phase-change material

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Phase stability and electronic structure of Si2Sb2Te5 phase-change material.pdf (346.7Kb)
发布日期
2010-08
作者
Sa, Baisheng
Miao, Nahihua
Zhou, Jian
Song, Zhitang
Sun, Zhimei
Ahuja, Rajeev
周健
孙志梅
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  • 材料学院-会议论文 [72]
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摘要
On the basis of an ab initio computational study, the present work provide a full understanding on the atomic arrangements, phase stability as well as electronic structure of Si2Sb2Te5, a newly synthesized phase-change material. The results show that Si2Sb2Te5 tends to decompose into Si1Sb2Te4 or Si1Sb4Te7 or Sb2Te3, therefore, a nano-composite containing Si1Sb2Te4, Si1Sb4Te7 and Sb2Te3 may be self-generated from Si2Sb2Te5. Hence Si2Sb2Te5 based nano-composite is the real structure when Si2Sb2Te5 is used in electronic memory applications. The present results agree well with the recent experimental work. (C) 2010 Elsevier Ltd. All rights reserved.
描述
Conference Name:5th International Conference on Study of Matter at Extreme Conditions. Conference Address: Miami, FL. Time:MAR 28-APR 02, 2009.
出处
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2010,71(8):1165-1167
本条目访问地址(URI)
https://dspace.xmu.edu.cn/handle/2288/85093

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