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dc.contributor.advisor徐进
dc.contributor.author吉川
dc.date.accessioned2016-01-12T01:43:43Z
dc.date.available2016-01-12T01:43:43Z
dc.date.issued2014-12-09 11:06:19.0
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/80612
dc.description.abstract半导体材料作为集成电路的基础,地位十分重要。重掺杂硅单晶的应用范围广,性质优良。但是重掺硼硅片不能通过传统的热处理得到洁净区(DZ),但是外延片的结构就可以弥补这一缺点,获得洁净区。闩锁效应和软失效是微电子工业中常见的问题,利用外延结构就可方便快捷地解决这一难题。铜具有非常优良的导电性,在集成电路中,如果使用铜就会大大提高其运算速度,并且提高散热效率,但是也会给硅片带来铜污染的危险,然而对铜沉淀在外延片中的形成机理的研究有待进一步深入。所以对重掺硼单晶硅p/p+外延片来说,很有必要探究铜在其中的沉淀行为,此类研究的学术价值以及工业价值均较高。本文借助腐蚀法和光学显微镜等测试设备,得出如下一些结...
dc.description.abstractWith the improvement of the microelectronic industry, the requirement for Si materials applied in Ultra Large Scale Integrated Circuit(ULSI) is improving seriously. The heavily boron-doped Czochralski silicon (HB CZ Si) wafers are generally applied to fabricate devices. Denude zone (DZ) was hardly formed in HB CZ Si wafers by means of RTP. Thus, p/p+ Si epitaxial wafer is an alternative structure ...
dc.language.isozh_CN
dc.relation.urihttps://catalog.xmu.edu.cn/opac/openlink.php?strText=43671&doctype=ALL&strSearchType=callno
dc.source.urihttps://etd.xmu.edu.cn/detail.asp?serial=44549
dc.subjectp/p+外延片
dc.subject铜沉淀
dc.subject点缺陷
dc.subjectp/p+ Si epitaxial wafer
dc.subjectcopper precipitation
dc.subjectpoint defects
dc.title硼掺杂直拉硅单晶p/p+外延片中铜沉淀的研究
dc.title.alternativeInvestigation of copper precipitation in heavily boron- doped Czochralski silicon p/p+ epitaxial wafers
dc.typethesis
dc.date.replied2014-05-15
dc.description.note学位:工学硕士
dc.description.note院系专业:材料学院_材料物理与化学
dc.description.note学号:20720111150062


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