Electrochemical Deposition of GaSb Thin Films for Phase Change Memory in Aqueous Solutions
- 2014年第20卷 
利用恒电位共沉积技术和热处理的方法成功制备了GaSb薄膜，探索了添加乙二醇溶剂对薄膜结晶性和形貌的影响. 采用循环伏安法初步研究了共沉积GaSb的机理，并用X-射线衍射技术（XRD）、扫描电子显微技术（SEM）和能谱分析（EDS）表征、观察样品. 研究表明，在沉积过程中，SbO+先还原成Sb单质，再诱导Ga3+发生共沉积；沉积电位对薄膜的结晶性、微观形貌和成分有显著影响；电解液加入乙二醇更利于在较正电位下直接沉积出GaSb，且有效地提高了薄膜的结晶度，改善了薄膜的微观形貌.The synthesis of GaSb thin films has been successfully performed by a method involving one-step potentiostatic electrodeposition and thermal annealing. The effect of ethylene glycol as a solvent in aqueous electrolyte solution on the crystallinity and morphology of the prepared thin films was discussed. The electrodeposition mechanisms of GaSb were studied by cyclic voltammetry, X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to analyze structure, morphology and composition of the thin films. The results show that SbO+ is first reduced to Sb, and Ga3+ is deposited via the induced co-deposition mechanism. The deposition potential has great effect on the crystallinity, morphology and composition of the GaSb thin films. Ethylene glycol in the aqueous electrolyte solution is beneficial to deposit GaSb directly at more positive potential, and effective to improve the crystallinity and microstructure of the thin films.