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dc.contributor.authorWen, R. T.zh_CN
dc.contributor.authorWang, L. S.zh_CN
dc.contributor.authorWang, X.zh_CN
dc.contributor.authorYue, G. H.zh_CN
dc.contributor.authorChen, Y. Z.zh_CN
dc.contributor.authorPeng, D. L.zh_CN
dc.contributor.author彭栋梁zh_CN
dc.date.accessioned2013-12-12T02:03:30Z
dc.date.available2013-12-12T02:03:30Z
dc.date.issued2010-10-22zh_CN
dc.identifier.citationJournal of Alloys and Compounds, 2010,508(2):370-374zh_CN
dc.identifier.issn0925-8388zh_CN
dc.identifier.otherISI:000283954000032zh_CN
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/59430
dc.descriptionNational Science Foundation of China [50825101, 50971108]; Natural Science Foundation of Fujian Province of China [2009J01263]; Fujian Province of PR Chinazh_CN
dc.description.abstractThe Al-doped zinc oxide (ZnO:Al) films were prepared on quartz glass flakes and silicon wafers by radio frequency (RF) magnetron sputtering which uses an aluminum-doped zinc oxide ceramic target. Meanwhile, their properties were characterized by scanning electron microscopy, X-ray diffraction, infrared-UV spectrophotometry, resistance measurement, nano-scratch and indentation test. Evolutions of the structural, optical, electrical and mechanical properties of the ZnO:Al films as a function of substrate temperatures ranging from room temperature to 400 degrees C were analyzed. The results indicate that the ZnO:Al films with a low resistivity value of 4.97 x 10(-4) Omega cm, a relatively higher adhesion and a high transparency above 90%, can be prepared at a substrate temperature of 400 degrees C. (C) 2010 Elsevier B.V. All rights reserved.zh_CN
dc.language.isoen_USzh_CN
dc.source.urihttp://dx.doi.org/10.1016/j.jallcom.2010.08.034zh_CN
dc.subjectZINC-OXIDE FILMSzh_CN
dc.subjectTHIN-FILMSzh_CN
dc.subjectTRANSPARENTzh_CN
dc.subjectDEPENDENCEzh_CN
dc.titleInfluence of substrate temperature on mechanical, optical and electrical properties of ZnO:Al filmszh_CN
dc.typeArticlezh_CN


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