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dc.contributor.author程璇zh_CN
dc.contributor.author罗广丰zh_CN
dc.contributor.authorCHENG Xuanzh_CN
dc.contributor.authorLUO Guang_fengzh_CN
dc.date.accessioned2013-11-18T07:45:06Z
dc.date.available2013-11-18T07:45:06Z
dc.date.issued2002-05-28zh_CN
dc.identifier.citation电化学,2002,8(02):134-138.zh_CN
dc.identifier.issn1006-3471zh_CN
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/57680
dc.description.abstract本工作初步探讨了开路电位下对硅片进行预处理时多孔硅的形成过程 .电化学极化实验、扫描电镜和拉曼谱学的研究表明 ,预处理可以加速硅 /溶液界面上的化学或电化学反应 ,从而加快多孔硅的生长过程 ,最终导致光致发光的光谱红移 .多孔硅的厚度随预处理时间的增长而减小zh_CN
dc.description.abstractIn this work, effect of precondition on porous silicon formation was investigated by performing electrochemical polarization measurements. The surface morphologies and optical properties of the samples were also studied by scanning electron microscopy (SEM) and Raman spectrometer. It was demonstrated that precondition enhanced the chemical/electrochemical reactions occurred at Si/solution interface and the growth of porous silicon, which ultimately resulted in a red shift in photoluminescence. However, the thickness of porous silicon decreased with the increase of precondition time. More broad bands were observed with prolonged precondition.zh_CN
dc.language.isozhzh_CN
dc.publisher厦门大学《电化学》编辑部zh_CN
dc.relation.ispartofseries研究论文zh_CN
dc.relation.ispartofseriesArticleszh_CN
dc.source.urihttp://electrochem.xmu.edu.cn/CN/abstract/abstract9176.shtmlzh_CN
dc.subject多孔硅zh_CN
dc.subject光致发光zh_CN
dc.subject预处理zh_CN
dc.subjectPorous siliconzh_CN
dc.subjectPhotoluminescencezh_CN
dc.subjectPreconditionzh_CN
dc.title预处理对多孔硅形成过程的影响(英文)zh_CN
dc.title.alternativeEffect of Precondition on Porous Silicon Formationzh_CN
dc.typeArticlezh_CN
dc.description.note作者联系地址:厦门大学化学系固体表面物理化学国家重点实验室,厦门大学化学系固体表面物理化学国家重点实验室 福建厦门361005 ,福建厦门361005zh_CN
dc.description.noteAuthor's Address: Dept.of Chem., State Key Lab. for Phys. Chem. of Solid Surfaces, Xiamen Univ., Xiamen 361005,Chinazh_CN


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