预处理对多孔硅形成过程的影响(英文)

Abstract

本工作初步探讨了开路电位下对硅片进行预处理时多孔硅的形成过程 .电化学极化实验、扫描电镜和拉曼谱学的研究表明 ,预处理可以加速硅 /溶液界面上的化学或电化学反应 ,从而加快多孔硅的生长过程 ,最终导致光致发光的光谱红移 .多孔硅的厚度随预处理时间的增长而减小

In this work, effect of precondition on porous silicon formation was investigated by performing electrochemical polarization measurements. The surface morphologies and optical properties of the samples were also studied by scanning electron microscopy (SEM) and Raman spectrometer. It was demonstrated that precondition enhanced the chemical/electrochemical reactions occurred at Si/solution interface and the growth of porous silicon, which ultimately resulted in a red shift in photoluminescence. However, the thickness of porous silicon decreased with the increase of precondition time. More broad bands were observed with prolonged precondition.