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dc.contributor.author黄怀国zh_CN
dc.contributor.author郑志新zh_CN
dc.contributor.author罗瑾zh_CN
dc.contributor.author张红平zh_CN
dc.contributor.author吴玲玲zh_CN
dc.contributor.author林仲华zh_CN
dc.contributor.authorHUANG Huai guozh_CN
dc.contributor.authorZHENG Zhi xinzh_CN
dc.contributor.authorLUO jinzh_CN
dc.contributor.authorZHANG Hong pingzh_CN
dc.contributor.authorWU Ling lingzh_CN
dc.contributor.authorLIN Zhong huazh_CN
dc.date.accessioned2013-11-18T07:44:56Z
dc.date.available2013-11-18T07:44:56Z
dc.date.issued2001-02-28zh_CN
dc.identifier.citation电化学,2001,7(01):102-108.zh_CN
dc.identifier.issn1006-3471zh_CN
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/57638
dc.description.abstract利用电化学方法制备了TiO2 聚苯胺 (PANI)复合膜 .该膜具有比TiO2 或PANI膜更宽的吸收谱区 ,并且不同于利用聚苯胺光敏化的TiO2 膜 ,表现为两者复合材料膜的性质 .扫描电镜图表明 ,TiO2 微粒不完全覆盖着PANI膜 .根据TiO2 微粒光电流谱带的阈值能可得复盖在部分氧化态聚苯胺膜上的TiO2 微粒的禁带宽度为 3.0eV .部分氧化态聚苯胺膜的光电流谱遵循Fowler定律 ( 1/2 ~hυ成线性 ) .通过Fowler图得出部分氧化态聚苯胺的绝缘母体禁带宽度为 3.33eV ,并证实该绝缘母体为还原态聚苯胺 .从Mott Schottky图得到在 0 .0 5mol/LK3Fe(CN) 6 /K4 Fe(CN) 6 溶液中 (pH =8.52 )部分氧化态聚苯胺的平带电位为 0 .13V ,掺杂浓度为 5.3× 10 18cm- 3;TiO2 PANI复合膜的平带电位为 - 0 .6 5V ,掺杂浓度为 9.1× 10 19cm- 3.解释了TiO2 PANI复合膜的光电化学过程并描绘出其能带图 .利用TiO2 PANI复合膜能够有效地光降解苯酚溶液 .zh_CN
dc.description.abstractA TiO 2 and polyaniline (PANI) composite film was obtained by electrochemical methods. The SEM image of the composite film showed that the PANI film is almost completely covered with TiO 2. The spectra of photocurrent for the TiO 2 PANI composite film , which overlaps the TiO 2 film and PANI film, showed that the composite film is able to have higher conversion efficiency. The spectra of photocurrent for the TiO 2 PANI composite film were different from these of TiO 2 film photosensitized by PANI. The bandgap energy of TiO 2 film on partially oxidized PANI film was determined as 3.0 eV by the threshold energy of photocurrent band for TiO 2. The spectra of photocurrent for partially oxidized PANI film electrode suggested that it has the characteristics of sub band gap spectra of photocurrent and followed Fowler rule(  1/2 ~hν) . The bandgap energy of insulating matrix in partially oxidized PANI is determined as 3.33 eV by the Flowler plots, and the insulating matrix in partially oxidized PANI was verified to be reduced PANI. The flat band potentials, in the order of 0.87 V vs. NHE for partially oxidized PANI and 0.09V vs. NHE for TiO 2 PANI composite film in 1.0 mol/L HClO 4 solution,were obtained from Mott Schottky plots. The doping content of partially oxidized PANI and TiO 2 PANI composite film are 5.3×10 18 cm -3 and 9.1×10 19 cm -3 , respectively. The photoelectrochemical process of TiO 2 PANI composite film is interpreted and the energy diagram is proposed. The TiO 2 PANI composite film can be well used for treating the wastewater, for example, containing phenol.zh_CN
dc.language.isozhzh_CN
dc.publisher厦门大学《电化学》编辑部zh_CN
dc.relation.ispartofseries研究论文zh_CN
dc.relation.ispartofseriesArticleszh_CN
dc.source.urihttp://electrochem.xmu.edu.cn/CN/abstract/abstract9295.shtmlzh_CN
dc.subjectTiO2zh_CN
dc.subject聚苯胺zh_CN
dc.subject光电化学zh_CN
dc.subjectTiO 2zh_CN
dc.subjectPolyanilinezh_CN
dc.subjectPhotoelectrochemistryzh_CN
dc.titleTiO_2聚苯胺复合膜的光电化学zh_CN
dc.title.alternativeThe Photoelectrochemistry of TiO_2-Polyaniline Composite Filmzh_CN
dc.typeArticlezh_CN
dc.description.note作者联系地址:厦门大学固体表面物理化学国家重点实验室化学系,物理化学研究所!福建厦门361005,厦门大学固体表面物理化学国家重点实验室化学系,物理化学研究所!福建厦门361005,厦门大学固体表面物理化学国家重点实验室化学系,物理化学研究所!福建厦门361005,厦门大学固体表面物理化学国家重zh_CN
dc.description.noteAuthor's Address: State Key Lab. for Phys. Chem. of the Solid Surface, Dept. of Chem., Inst. of Phys. Chem., Xiamen Univ., Xiamen, 361005,Chinazh_CN


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