Study on Electrochemical Behavior of Copper in NH_3·H_2O Solution Medium Including K_3 during CMP
HU Yue hua
HE Han wei
H UANG Ke nong
- 2001年第7卷 
应用电化学测试技术研究了介质浓度 (包括pH值 )和成膜剂浓度对铜表面成膜及铜抛光过程的影响 ,探讨了成膜厚度及其致密性与抛光压力、抛光转速的关系 ,考察了压力及转速对抛光过程的作用 ,找出影响抛光过程及抛光速率的电化学变量 .用腐蚀电位及腐蚀电流密度的变化解释了抛光过程的电化学机理 ,通过成膜速率及除膜速率的对比得出了抛光过程的控制条件 .证明了在氨水溶液介质中、以铁氰化钾为成膜剂、纳米γ -Al2 O3为磨粒的抛光液配方是可行的 ,其抛光控制条件为压力 10psi、转速 30 0r/minInfluence of medium pH value and passivator concentrations on the copper passivation and CMP process were studied by electrochemical measurement technologies, relations of the film thickness and tightness with polishing process and polishing rates were investigated. Electrochemical variables influencing polishing process and rates were found out. Electochemical mechanism of polishing processes were explained by corrosion potential and corrosion current density. A recipe of K 3 as passivator and nano sized γ Al 2O 3 as abrasives in medium of NH 3·H 2O solution was confirmed reasonable. It is shown that the conditions of polishing process to be controlled are 10 psi and 300 r/min.