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dc.contributor.author李国铮zh_CN
dc.contributor.author张承乾zh_CN
dc.contributor.author张强zh_CN
dc.contributor.authorLi Guozhengzh_CN
dc.contributor.authorZhang Chenqian
dc.date.accessioned2013-11-18T07:43:38Z
dc.date.available2013-11-18T07:43:38Z
dc.date.issued1996-05-28zh_CN
dc.identifier.citation电化学,1996,2(02):140-143.zh_CN
dc.identifier.issn1006-3471zh_CN
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/57236
dc.description.abstractn型多孔硅的电发光性能及其XPS和LIMA表征①李国铮*张承乾张强(山东大学化学系,济南250100)(厦门大学化学系,厦门361005)多孔硅(PS)的发光性能与其化学组成和结构的关系已为人们所关注.曾有人认为,发光是由于纳米级多孔硅的量子限制效应...zh_CN
dc.description.abstractThe chemical composition and structure of electroluminescent porous Si(PS) on n Si, prepared by photoelectrochemical etching method, were investigated by using XPS and LIMA. The results show that electroluminescence(EL) intensity depends on the formation potential of PS. The relation between EL property and the results of XPS and LIMA is also discussed.zh_CN
dc.language.isozhzh_CN
dc.publisher厦门大学《电化学》编辑部zh_CN
dc.relation.ispartofseries研究论文zh_CN
dc.relation.ispartofseriesArticleszh_CN
dc.source.urihttp://electrochem.xmu.edu.cn/CN/abstract/abstract9650.shtmlzh_CN
dc.subjectPorous siliconzh_CN
dc.subjectXPSzh_CN
dc.subjectLIMAzh_CN
dc.subjectElectroluminescencezh_CN
dc.titlen型多孔硅的电发光性能及其XPS和LIMA表征zh_CN
dc.title.alternativeElectroluminescent Property of n Type Porous Si and Its Characterization by XPS and LIMAzh_CN
dc.typeArticlezh_CN
dc.description.note作者联系地址:山东大学化学系,厦门大学化学系zh_CN
dc.description.noteAuthor's Address: Department of Chemistry, Shandong University, jinan 250100 Zhang Qiang Department of Chemistry, Xiamen University, Xiamen 361005zh_CN


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