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dc.contributor.advisor康俊勇
dc.contributor.author郑江海
dc.date.accessioned2016-02-14T08:11:02Z
dc.date.available2016-02-14T08:11:02Z
dc.date.issued2006-09-29 08:33:45.78
dc.identifier.urihttps://dspace.xmu.edu.cn/handle/2288/55087
dc.description.abstractInGaN半导体的带隙基本上覆盖了整个可见光波段,还包含了部分红外波段,在光电器件和光存储器件方面都有着广泛的应用。目前,影响其未来发展的几个难题,包括晶体质量、发光机制和相分离现象,深受大家的关注并需要迫切解决。本论文通过计算模拟和实验研究,并结合前人的研究,全面深入地考察了InGaN中相分离的有关问题,分析其性质、阐明其物理机制,进而讨论其抑制方法及其对InGaN发光的影响等。首先从热力学基础出发,着重分析了相分离与自由能变化量的关系,得出自由能变化量是否大于0,由混合焓和熵共同确定;当∂2G/∂x2<0时,亚稳态分解自发产生,从而导致了相分离的发生,反之,&...
dc.description.abstractInGaN has been widely used in the fabrication of optoelectronic devices due to its wide bandgap ranges (0.7 – 3.4 eV). The stringent requirement for the growth of high-quality InGaN films, which has become a major obstacle for the further developments of high-performance devices, and studies on mechanisms of light emission and phase separation (PS) have attracted intense interests. The thesis has...
dc.language.isozh_CN
dc.relation.urihttps://catalog.xmu.edu.cn/opac/openlink.php?strText=12535&doctype=ALL&strSearchType=callno
dc.source.urihttps://etd.xmu.edu.cn/detail.asp?serial=13342
dc.subject相分离
dc.subjectInGaN
dc.subject亚稳态分解
dc.subjectPhase separation
dc.subjectInGaN
dc.subjectSpinodal decomposition
dc.titleInGaN中相分离及其抑制的研究
dc.title.alternativePhase Separation and Suppression In Wurtzite InGaN
dc.typethesis
dc.date.replied2006-09-04
dc.description.note学位:工学硕士
dc.description.note院系专业:物理与机电工程学院物理学系_微电子学与固体电子学
dc.description.note学号:200324039


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